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IRF6602

IRF6602

IRF6602

Infineon Technologies

MOSFET N-CH 20V 11A DIRECTFET

SOT-23

IRF6602 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MQ
Supplier Device Package DIRECTFET™ MQ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.3W Ta 42W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1420pF @ 10V
Current - Continuous Drain (Id) @ 25°C 11A Ta 48A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS Status Non-RoHS Compliant

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