NTD5807NT4G

new-10%

Manufacturer part number:NTD5807NT4G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 40V 23A DPAK

Case Package:SOT-23

Datasheet:NTD5807NT4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 5 days ago)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	33W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	33W
Case Connection	DRAIN
Turn On Delay Time	11.2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	31m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	603pF @ 25V
Current - Continuous Drain (Id) @ 25°C	23A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	20.4ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	2 ns
Turn-Off Delay Time	15.6 ns
Continuous Drain Current (ID)	23A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Height	2.38mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free