SIHB30N60E-E3

new-10%

Manufacturer part number:SIHB30N60E-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 600V 29A D2PAK

Case Package:SOT-23

Datasheet:SIHB30N60E-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	250W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250W
Turn On Delay Time	19 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	125m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2600pF @ 100V
Current - Continuous Drain (Id) @ 25°C	29A Tc
Gate Charge (Qg) (Max) @ Vgs	130nC @ 10V
Rise Time	32ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	36 ns
Turn-Off Delay Time	63 ns
Continuous Drain Current (ID)	29A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	65A
Avalanche Energy Rating (Eas)	690 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant