IRF6609TRPBF

new-10%

Manufacturer part number:IRF6609TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 20V 31A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6609TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MT
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	HEXFET®
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
Current Rating	31A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-XBCC-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.8W Ta 89W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	89W
Case Connection	DRAIN
Turn On Delay Time	24 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2m Ω @ 31A, 10V
Vgs(th) (Max) @ Id	2.45V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6290pF @ 10V
Current - Continuous Drain (Id) @ 25°C	31A Ta 150A Tc
Gate Charge (Qg) (Max) @ Vgs	69nC @ 4.5V
Rise Time	95ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	9.8 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	150mA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.002Ohm
Drain to Source Breakdown Voltage	20V
Avalanche Energy Rating (Eas)	240 mJ
Height	506μm
Length	6.35mm
Width	5.05mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free