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PHM12NQ20T,518

PHM12NQ20T,518

PHM12NQ20T,518

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 130m Ω @ 12A, 10V ±20V 1230pF @ 25V 26nC @ 10V 200V 8-VDFN Exposed Pad

SOT-23

PHM12NQ20T,518 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchMOS™
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Reach Compliance Code unknown
Pin Count 8
JESD-30 Code R-PDSO-N2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 62.5W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1230pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14.4A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 20.4A
Drain-source On Resistance-Max 0.085Ohm
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 200V
RoHS Status ROHS3 Compliant
PHM12NQ20T,518 Product Details

PHM12NQ20T,518 Overview


A device's maximum input capacitance is 1230pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 20.4A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 200V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.

PHM12NQ20T,518 Features


based on its rated peak drain current 60A.
a 200V drain to source voltage (Vdss)


PHM12NQ20T,518 Applications


There are a lot of NXP USA Inc.
PHM12NQ20T,518 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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