IRF6614TRPBF

new-10%

Manufacturer part number:IRF6614TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 12.7A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6614TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric ST
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	HEXFET®
JESD-609 Code	e1
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	8.3MOhm
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC	40V
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Current Rating	12.7A
JESD-30 Code	R-XBCC-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.1W Ta 42W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	42W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.3m Ω @ 12.7A, 10V
Vgs(th) (Max) @ Id	2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2560pF @ 20V
Current - Continuous Drain (Id) @ 25°C	12.7A Ta 55A Tc
Gate Charge (Qg) (Max) @ Vgs	29nC @ 4.5V
Rise Time	27ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3.6 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	10.1A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Avalanche Energy Rating (Eas)	22 mJ
Height	506μm
Length	4.826mm
Width	3.95mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free