Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric SQ
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Voltage - Rated DC	25V
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Current Rating	15A
JESD-30 Code	R-XBCC-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.2W Ta 34W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	34W
Case Connection	DRAIN
Turn On Delay Time	9.4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.3m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	1450pF @ 13V
Current - Continuous Drain (Id) @ 25°C	15A Ta 59A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 4.5V
Rise Time	16ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4.6 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0063Ohm
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	120A
Avalanche Energy Rating (Eas)	13 mJ
Height	506μm
Length	4.826mm
Width	3.95mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free

IRF6622TRPBF

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