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IPB180N06S4H1ATMA1

IPB180N06S4H1ATMA1

IPB180N06S4H1ATMA1

Rochester Electronics, LLC

OPTLMOS N-CHANNEL POWER MOSFET

SOT-23

IPB180N06S4H1ATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Supplier Device Package PG-TO263-7-3
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 250W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 21.9pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $1.43681 $1.43681

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