IRF6633ATR1PBF

new-10%

Manufacturer part number:IRF6633ATR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 20V 16A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6633ATR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MU
Number of Pins	3
Supplier Device Package	DIRECTFET™ MU
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	2.3W Ta 42W Tc
Power Dissipation	42W
Turn On Delay Time	6.9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.6mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1410pF @ 10V
Current - Continuous Drain (Id) @ 25°C	16A Ta 69A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 4.5V
Rise Time	13ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	7.7 ns
Turn-Off Delay Time	8.4 ns
Continuous Drain Current (ID)	16A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	20V
Input Capacitance	1.41nF
Drain to Source Resistance	9.4mOhm
Rds On Max	5.6 mΩ
Height	700μm
Width	5.05mm
Radiation Hardening	No
RoHS Status	RoHS Compliant