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IRF6635TR1

IRF6635TR1

IRF6635TR1

Infineon Technologies

MOSFET N-CH 30V 32A DIRECTFET

SOT-23

IRF6635TR1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Number of Pins 7
Supplier Device Package DIRECTFET™ MX
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 32A
Power Dissipation-Max 2.8W Ta 89W Tc
Power Dissipation 2.8W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.8mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 2.35V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5970pF @ 15V
Current - Continuous Drain (Id) @ 25°C 32A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs 71nC @ 4.5V
Rise Time 13ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 25A
Threshold Voltage 1.8V
Drain to Source Breakdown Voltage 30V
Input Capacitance 5.97nF
Rds On Max 1.8 mΩ
REACH SVHC No SVHC
RoHS Status Non-RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.577976 $0.577976
10 $0.545261 $5.45261
100 $0.514397 $51.4397
500 $0.485280 $242.64
1000 $0.457811 $457.811

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