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SUM110N04-03-E3

SUM110N04-03-E3

SUM110N04-03-E3

Vishay Siliconix

MOSFET 40V 110A 437.5W 2.8mohm @ 10V

SOT-23

SUM110N04-03-E3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2009
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Pin Count4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.75W Ta 375W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation437.5W
Turn On Delay Time25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Rise Time170ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 55 ns
Reverse Recovery Time 60 ns
Continuous Drain Current (ID) 110A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0028Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 440A
Dual Supply Voltage 40V
Nominal Vgs 4 V
Height 4.83mm
Length 10.41mm
Width 9.65mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:4706 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.183590$2.18359
10$2.059991$20.59991
100$1.943388$194.3388
500$1.833384$916.692
1000$1.729609$1729.609

About SUM110N04-03-E3

The SUM110N04-03-E3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 40V 110A 437.5W 2.8mohm @ 10V.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SUM110N04-03-E3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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