IRLR7843PBF Description
The P-channel MOSFETIRLR7843PBF of the International Rectifier Company adopts advanced technology to achieve a very low on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with extremely efficient and reliable devices for battery and load management. The heat-enhanced large pad lead frame is used in the standard SOT-23 package to produce the smallest HEXFET power MOSFET in the industry. This package, known as Micro3 packaging, is ideal for applications where space on printed circuit boards is scarce. The ultra-thin shape of the Micro3 (< 1.1 mm) makes it easy to adapt to extremely thin application environments, such as portable electronics and PCMCIA cards. Thermal resistance and power consumption are the best.
IRLR7843PBF Applications
High Frequency Synchronous Buck
Converters for Computer Processor Power
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Lead-Free
IRLR7843PBF Features
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage and Current
