IRF6635TRPBF

new-10%

Manufacturer part number:IRF6635TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 32A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6635TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MX
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	1.8MOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Current Rating	32A
JESD-30 Code	R-XBCC-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.8W Ta 89W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	89W
Case Connection	DRAIN
Turn On Delay Time	21 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.8m Ω @ 32A, 10V
Vgs(th) (Max) @ Id	2.35V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5970pF @ 15V
Current - Continuous Drain (Id) @ 25°C	32A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs	71nC @ 4.5V
Rise Time	13ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8.3 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	32mA
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Avalanche Energy Rating (Eas)	200 mJ
Nominal Vgs	1.8 V
Height	506μm
Length	6.35mm
Width	5.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free