IXFN73N30Q

new-10%

Manufacturer part number:IXFN73N30Q

Manufacturer:IXYS

Description:MOSFET N-CH 300V 73A SOT-227B

Case Package:SOT-23

Datasheet:IXFN73N30Q Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	HiPerFET™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	481W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	45m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	5400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	73A Tc
Gate Charge (Qg) (Max) @ Vgs	195nC @ 10V
Rise Time	36ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	82 ns
Continuous Drain Current (ID)	73A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	300V
Pulsed Drain Current-Max (IDM)	292A
Avalanche Energy Rating (Eas)	2500 mJ
RoHS Status	ROHS3 Compliant