IXTF03N400

new-10%

Manufacturer part number:IXTF03N400

Manufacturer:IXYS

Description:MOSFET HI VOLTAGE MOSFET N-CHANNEL

Case Package:SOT-23

Datasheet:IXTF03N400 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	i4-Pac™-5 (3 Leads)
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	UL RECOGNIZED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	70W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	70W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	300 Ω @ 150mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	435pF @ 25V
Current - Continuous Drain (Id) @ 25°C	300mA Tc
Gate Charge (Qg) (Max) @ Vgs	16.3nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	4000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	58 ns
Turn-Off Delay Time	86 ns
Continuous Drain Current (ID)	300mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.3A
Drain to Source Breakdown Voltage	4kV
Pulsed Drain Current-Max (IDM)	0.8A
RoHS Status	RoHS Compliant