IRF6641TR1PBF

new-10%

Manufacturer part number:IRF6641TR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 200V 4.6A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6641TR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MZ
Number of Pins	5
Supplier Device Package	DIRECTFET™ MZ
Operating Temperature	-40°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2007
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Current Rating	4.6A
Number of Elements	1
Power Dissipation-Max	2.8W Ta 89W Tc
Element Configuration	Single
Power Dissipation	89W
Turn On Delay Time	16 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	59.9mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	4.9V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	2290pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.6A Ta 26A Tc
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	11ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	6.5 ns
Turn-Off Delay Time	31 ns
Continuous Drain Current (ID)	3.7A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Dual Supply Voltage	200V
Input Capacitance	2.29nF
Recovery Time	130 ns
Drain to Source Resistance	59.9mOhm
Rds On Max	59.9 mΩ
Nominal Vgs	4 V
Height	506μm
Length	6.35mm
Width	5.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free