IRF6644TR1PBF

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IRF6644TR1PBF

Manufacturer part number:IRF6644TR1PBF

Manufacturer:Infineon Technologies

Description:IRF6644TR1PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF6644TR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MN
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	SMD/SMT
Resistance	13MOhm
Additional Feature	LOW CONDUCTION LOSS
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Current Rating	10.3A
JESD-30 Code	R-XBCC-N3
Number of Elements	1
Power Dissipation-Max	2.8W Ta 89W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.8W
Case Connection	DRAIN
Turn On Delay Time	17 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	13m Ω @ 10.3A, 10V
Vgs(th) (Max) @ Id	4.8V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	2210pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10.3A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs	47nC @ 10V
Rise Time	26ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	34 ns
Continuous Drain Current (ID)	8.3A
Threshold Voltage	2.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	228A
Dual Supply Voltage	100V
Avalanche Energy Rating (Eas)	86 mJ
Recovery Time	63 ns
Nominal Vgs	2.8 V
Height	506μm
Length	6.35mm
Width	5.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free