FQA47P06 Description

The FQA47P06 P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and provide superior switching performance and high avalanche energy strength. 

FQA47P06 Features

-47A, -60V, R_DS(on) = 26mΩ(Max.) @V_GS = -10 V, ID = -23.5A

Low gate charge ( Typ. 84nC)

Low Crss ( Typ. 320pF)

100% avalanche tested

175°C maximum junction temperature rating

 FQA47P06 Applicaitons

• Other Data Processing