BUK9623-75A,118

new-10%

Manufacturer part number:BUK9623-75A,118

Manufacturer:NXP USA Inc.

Description:MOSFET N-CH 75V 53A D2PAK

Case Package:SOT-23

Datasheet:BUK9623-75A,118 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.75
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	138W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	22m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	3120pF @ 25V
Current - Continuous Drain (Id) @ 25°C	53A Tc
Drain to Source Voltage (Vdss)	75V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±10V
Drain Current-Max (Abs) (ID)	53A
Drain-source On Resistance-Max	0.026Ohm
Pulsed Drain Current-Max (IDM)	213A
DS Breakdown Voltage-Min	75V
Avalanche Energy Rating (Eas)	120 mJ
RoHS Status	ROHS3 Compliant