IRF6655TR1

new-10%

Manufacturer part number:IRF6655TR1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V DIRECTFET-SH

Case Package:SOT-23

Datasheet:IRF6655TR1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric SH
Number of Pins	6
Supplier Device Package	DIRECTFET™ SH
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Resistance	62mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	2.2W Ta 42W Tc
Power Dissipation	4.2W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	62mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	4.8V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	530pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.2A Ta 19A Tc
Gate Charge (Qg) (Max) @ Vgs	11.7nC @ 10V
Rise Time	2.8ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	14 ns
Reverse Recovery Time	31 ns
Continuous Drain Current (ID)	19A
Threshold Voltage	4.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Dual Supply Voltage	100V
Input Capacitance	530pF
Drain to Source Resistance	53mOhm
Rds On Max	62 mΩ
Nominal Vgs	4.8 V
Width	3.95mm
REACH SVHC	No SVHC
RoHS Status	Non-RoHS Compliant