IRF6662TR1PBF

new-10%

Manufacturer part number:IRF6662TR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 8.3A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6662TR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MZ
Number of Pins	5
Supplier Device Package	DIRECTFET™ MZ
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Resistance	22MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Current Rating	8.3A
Number of Elements	1
Power Dissipation-Max	2.8W Ta 89W Tc
Element Configuration	Single
Power Dissipation	89W
Turn On Delay Time	11 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	22mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id	4.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1360pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8.3A Ta 47A Tc
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Rise Time	7.5ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	5.9 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	6.6A
Threshold Voltage	3.9V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Dual Supply Voltage	100V
Input Capacitance	1.36nF
Recovery Time	51 ns
Drain to Source Resistance	17.5mOhm
Rds On Max	22 mΩ
Nominal Vgs	3.9 V
Height	508μm
Length	5.45mm
Width	5.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free