SPD08N50C3BTMA1

new-10%

Manufacturer part number:SPD08N50C3BTMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 560V 7.6A DPAK

Case Package:SOT-23

Datasheet:SPD08N50C3BTMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	CoolMOS™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Additional Feature	AVALANCHE RATED, HIGH VOLTAGE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	83W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	600m Ω @ 4.6A, 10V
Vgs(th) (Max) @ Id	3.9V @ 350μA
Input Capacitance (Ciss) (Max) @ Vds	750pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7.6A Tc
Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Drain to Source Voltage (Vdss)	560V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-252AA
Drain Current-Max (Abs) (ID)	7.6A
Drain-source On Resistance-Max	0.6Ohm
Pulsed Drain Current-Max (IDM)	22.8A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	230 mJ
RoHS Status	RoHS Compliant