IRF6785MTR1PBF

new-10%

Manufacturer part number:IRF6785MTR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 200V 3.4A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6785MTR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MZ
Number of Pins	7
Supplier Device Package	DIRECTFET™ MZ
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Resistance	100MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.8W Ta 57W Tc
Element Configuration	Dual
Power Dissipation	57W
Turn On Delay Time	6.2 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	100mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id	5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.4A Ta 19A Tc
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Rise Time	8.6ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	7.2 ns
Continuous Drain Current (ID)	19A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Dual Supply Voltage	200V
Input Capacitance	1.5nF
Drain to Source Resistance	85mOhm
Rds On Max	100 mΩ
Nominal Vgs	5 V
Height	506μm
Length	6.35mm
Width	5.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free