IRF6691TR1

new-10%

Manufacturer part number:IRF6691TR1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 20V 32A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6691TR1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MT
Number of Pins	7
Supplier Device Package	DIRECTFET™ MT
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Termination	SMD/SMT
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Current Rating	32A
Power Dissipation-Max	2.8W Ta 89W Tc
Power Dissipation	2.8W
Turn On Delay Time	23 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6580pF @ 10V
Current - Continuous Drain (Id) @ 25°C	32A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs	71nC @ 4.5V
Rise Time	95ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±12V
Forward Voltage	650mV
Fall Time (Typ)	10 ns
Turn-Off Delay Time	25 ns
Reverse Recovery Time	32 ns
Continuous Drain Current (ID)	32A
Threshold Voltage	2.5V
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
Dual Supply Voltage	20V
Input Capacitance	6.58nF
Drain to Source Resistance	1.8mOhm
Rds On Max	1.8 mΩ
Nominal Vgs	2.5 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead