IRF6709S2TR1PBF

new-10%

Manufacturer part number:IRF6709S2TR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 12A DIRECTFET-S1

Case Package:SOT-23

Datasheet:IRF6709S2TR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric S1
Number of Pins	5
Supplier Device Package	DIRECTFET S1
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Resistance	7.8MOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	1.8W Ta 21W Tc
Power Dissipation	1.8W
Turn On Delay Time	8.4 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7.8mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	1010pF @ 13V
Current - Continuous Drain (Id) @ 25°C	12A Ta 39A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 4.5V
Rise Time	25ns
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	9.5 ns
Turn-Off Delay Time	9.1 ns
Continuous Drain Current (ID)	12A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	25V
Dual Supply Voltage	25V
Input Capacitance	1.01nF
Recovery Time	23 ns
Drain to Source Resistance	13.5mOhm
Rds On Max	7.8 mΩ
Nominal Vgs	1.8 V
Height	558.8μm
Length	4.826mm
Width	3.95mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free