IRFIB41N15DPBF

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IRFIB41N15DPBF

Manufacturer part number:IRFIB41N15DPBF

Manufacturer:Infineon Technologies

Description:IRFIB41N15DPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFIB41N15DPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2003
Series	HEXFET®
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	150V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
Current Rating	41A
[email protected] Reflow Temperature-Max (s)	40
Number of Elements	1
Power Dissipation-Max	48W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	200W
Case Connection	ISOLATED
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	45m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2520pF @ 25V
Current - Continuous Drain (Id) @ 25°C	41A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	63ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	41A
Threshold Voltage	5.5V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.045Ohm
Drain to Source Breakdown Voltage	150V
Dual Supply Voltage	150V
Avalanche Energy Rating (Eas)	470 mJ
Nominal Vgs	5.5 V
Height	16.12mm
Length	10.6172mm
Width	4.826mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free