IRF6722MTRPBF

new-10%

Manufacturer part number:IRF6722MTRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 13A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6722MTRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MP
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	HEXFET®
JESD-609 Code	e1
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
JESD-30 Code	R-XBCC-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.3W Ta 42W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	42W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.7m Ω @ 13A, 10V
Vgs(th) (Max) @ Id	2.4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 15V
Current - Continuous Drain (Id) @ 25°C	13A Ta 56A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 4.5V
Rise Time	7.8ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6.1 ns
Turn-Off Delay Time	9.5 ns
Continuous Drain Current (ID)	13A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0077Ohm
Drain to Source Breakdown Voltage	30V
Avalanche Energy Rating (Eas)	82 mJ
Height	506μm
Length	6.35mm
Width	5.05mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant