SI4845DY-T1-E3

new-10%

Manufacturer part number:SI4845DY-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 2.7A 8-SOIC

Case Package:SOT-23

Datasheet:SI4845DY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Weight	186.993455mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	LITTLE FOOT®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	1.75W Ta 2.75W Tc
Turn On Delay Time	3 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	210mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	312pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.7A Tc
Gate Charge (Qg) (Max) @ Vgs	4.5nC @ 4.5V
Rise Time	10ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	-27A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-30V
Input Capacitance	312pF
FET Feature	Schottky Diode (Isolated)
Drain to Source Resistance	210mOhm
Rds On Max	210 mΩ
Height	1.55mm
Length	5mm
Width	4mm
RoHS Status	ROHS3 Compliant