FDB12N50UTM_WS

new-10%

Manufacturer part number:FDB12N50UTM_WS

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 500V 10A D2PAK

Case Package:SOT-23

Datasheet:FDB12N50UTM_WS Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.31247g
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	FRFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	165W Tc
Element Configuration	Single
Power Dissipation	165W
Turn On Delay Time	35 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	800m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1395pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	10A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Radiation Hardening	No
RoHS Status	RoHS Compliant