IRF6725MTR1PBF

new-10%

Manufacturer part number:IRF6725MTR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 28A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6725MTR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MX
Number of Pins	7
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	2.2MOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Configuration	Single
Power Dissipation-Max	2.8W Ta 100W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.8W
Turn On Delay Time	16 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.2m Ω @ 28A, 10V
Vgs(th) (Max) @ Id	2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	4700pF @ 15V
Current - Continuous Drain (Id) @ 25°C	28A Ta 170A Tc
Gate Charge (Qg) (Max) @ Vgs	54nC @ 4.5V
Rise Time	22ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	28A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Recovery Time	41 ns
Nominal Vgs	1.8 V
Height	506μm
Length	6.35mm
Width	5.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free