IPB12CNE8N G

new-10%

Manufacturer part number:IPB12CNE8N G

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 85V 67A TO263-3

Case Package:SOT-23

Datasheet:IPB12CNE8N G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	125W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12.9m Ω @ 67A, 10V
Vgs(th) (Max) @ Id	4V @ 83μA
Input Capacitance (Ciss) (Max) @ Vds	4340pF @ 40V
Current - Continuous Drain (Id) @ 25°C	67A Tc
Gate Charge (Qg) (Max) @ Vgs	64nC @ 10V
Drain to Source Voltage (Vdss)	85V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	67A
Drain-source On Resistance-Max	0.0129Ohm
Pulsed Drain Current-Max (IDM)	268A
DS Breakdown Voltage-Min	85V
Avalanche Energy Rating (Eas)	154 mJ
RoHS Status	RoHS Compliant