IRF7326D2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF7326D2 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Supplier Device Package
8-SO
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
1999
Series
FETKY™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2W Ta
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
100mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
440pF @ 25V
Current - Continuous Drain (Id) @ 25°C
3.6A Ta
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
FET Feature
Schottky Diode (Isolated)
RoHS Status
Non-RoHS Compliant
IRF7326D2 Product Details
IRF7326D2 Description
For switching regulator and power management applications, the FETKY family of co-packaged MOSFETs and Schottky diodes gives the designer a creative, board space-saving solution. Modern processing methods are used by Generation 5 HEXFET Power MOSFETs to provide extraordinarily low on-resistance per silicon area. When this technology is combined with the low forward drop Schottky rectifiers from International Rectifier, a very effective device that may be used in a wide range of portable electronics applications is created.
For improved thermal properties, the leadframe of the SO-8 has been changed. The SO-8 package is made for soldering using the vapor phase, infrared, or wave processes.
IRF7326D2 Features
Co-packaged HEXFET? Power MOSFET and Schottky Diode