IRF6725MTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF6725MTRPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MX
Number of Pins
5
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
JESD-30 Code
R-XBCC-N3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.8W Ta 100W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
100W
Case Connection
DRAIN
Turn On Delay Time
16 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.2m Ω @ 28A, 10V
Vgs(th) (Max) @ Id
2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
4700pF @ 15V
Current - Continuous Drain (Id) @ 25°C
28A Ta 170A Tc
Gate Charge (Qg) (Max) @ Vgs
54nC @ 4.5V
Rise Time
22ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
170A
Threshold Voltage
1.8V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
28A
Drain-source On Resistance-Max
0.0022Ohm
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
220A
Avalanche Energy Rating (Eas)
190 mJ
Nominal Vgs
1.8 V
Height
506μm
Length
6.35mm
Width
5.05mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
4,800
$0.69200
$2.768
IRF6725MTRPBF Product Details
IRF6725MTRPBF Description
The IRF6725MPBF combines the latest HEXFET? Power MOSFET Silicon technology with innovative DirectFETTM packaging to deliver the lowest on-state resistance in a MICRO-8-sized device with a 0.7 mm profile. When application note AN-1035 addressing manufacturing methods and procedures is followed, the DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques. The DirectFET package enables dual-sided cooling in power systems, resulting in an 80 percent increase in thermal resistance over the previous best.
IRF6725MTRPBF Features
?Halogen-free and RoHS compliant
?Has a low profile (about 0.7 mm)
?Compatible with dual-sided cooling
?Inductance of the package is really low.
?It's designed for switching at high frequencies.
?Perfect for DC-DC Converters in CPU Cores
?Optimized for Sync.FET as well as a few Control FET applications)