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IRF6725MTRPBF

IRF6725MTRPBF

IRF6725MTRPBF

Infineon Technologies

IRF6725MTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF6725MTRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 100W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 100W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.2m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 15V
Current - Continuous Drain (Id) @ 25°C 28A Ta 170A Tc
Gate Charge (Qg) (Max) @ Vgs 54nC @ 4.5V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 170A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 28A
Drain-source On Resistance-Max 0.0022Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 220A
Avalanche Energy Rating (Eas) 190 mJ
Nominal Vgs 1.8 V
Height 506μm
Length 6.35mm
Width 5.05mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
4,800 $0.69200 $2.768
IRF6725MTRPBF Product Details

IRF6725MTRPBF Description


The IRF6725MPBF combines the latest HEXFET? Power MOSFET Silicon technology with innovative DirectFETTM packaging to deliver the lowest on-state resistance in a MICRO-8-sized device with a 0.7 mm profile. When application note AN-1035 addressing manufacturing methods and procedures is followed, the DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques. The DirectFET package enables dual-sided cooling in power systems, resulting in an 80 percent increase in thermal resistance over the previous best.



IRF6725MTRPBF Features


?Halogen-free and RoHS compliant


?Has a low profile (about 0.7 mm)


?Compatible with dual-sided cooling


?Inductance of the package is really low.


?It's designed for switching at high frequencies.


?Perfect for DC-DC Converters in CPU Cores


?Optimized for Sync.FET as well as a few Control FET applications)


?Low Switching and Conduction Losses



IRF6725MTRPBF Applications


Switching applications


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