IRF6726MTR1PBF

new-10%

Manufacturer part number:IRF6726MTR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 32A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6726MTR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MT
Number of Pins	7
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	SMD/SMT
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
JESD-30 Code	R-XBCC-N3
Number of Elements	1
Power Dissipation-Max	2.8W Ta 89W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.8W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.7m Ω @ 32A, 10V
Vgs(th) (Max) @ Id	2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	6140pF @ 15V
Current - Continuous Drain (Id) @ 25°C	32A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs	77nC @ 4.5V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	17 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	32A
Threshold Voltage	1.7V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	250A
Dual Supply Voltage	30V
Avalanche Energy Rating (Eas)	260 mJ
Recovery Time	41 ns
Nominal Vgs	1.7 V
Height	508μm
Length	5.45mm
Width	5.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free