IRF6729MTR1PBF

new-10%

Manufacturer part number:IRF6729MTR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 31A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6729MTR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MX
Number of Pins	7
Supplier Device Package	DIRECTFET™ MX
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.8W Ta 104W Tc
Element Configuration	Single
Power Dissipation	2.8W
Turn On Delay Time	22 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.8mOhm @ 31A, 10V
Vgs(th) (Max) @ Id	2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	6030pF @ 15V
Current - Continuous Drain (Id) @ 25°C	31A Ta 190A Tc
Gate Charge (Qg) (Max) @ Vgs	63nC @ 4.5V
Rise Time	37ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	31A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	6.03nF
Drain to Source Resistance	2.7mOhm
Rds On Max	1.8 mΩ
Nominal Vgs	1.8 V
Height	506μm
Length	6.35mm
Width	5.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant