IRF6775MTR1PBF    Description

This digital audio MOSFET is designed for Class D audio amplifier applications. The MOSFET uses the latest technology to achieve a low on-resistance per silicon area. In addition, gate charge, body diode reverse recovery and internal gate resistance are optimized to improve the key performance factors of Class D audio amplifier, such as efficiency, THD and EMI. IRF6775MPbF equipment adopts DirectFETTM packaging technology. Compared with traditional wire-welded SOIC packaging, DirectFETTM packaging technology provides lower parasitic inductance and resistance. Lower inductors improve EMI performance by reducing the voltage ringing associated with fast current transients. The DirectFETTM package is compatible with existing layout geometry used in power applications, printed circuit board assembly equipment and gas phase, infrared or convection welding technologies, if the application instructions for manufacturing methods and processes are followed, AN-1035. The DirectFETTM package also allows double-sided cooling to maximize heat transfer in the power system, thereby increasing thermal resistance and power consumption. The combination of these features makes the MOSFET an efficient, rugged and reliable device for Class D audio amplifier applications.

IRF6775MTR1PBF       Features

? Latest MOSFET Silicon technology

? Key parameters optimized for Class-D audio amplifier

 applications

? Low RDS(on) for improved efficiency

? Low Qg for better THD and improved efficiency

? Low Qrr for better THD and lower EMI

? Low package stray inductance for reduced ringing and lower EMI

? Can deliver up to 250W per channel into 4Ω Load in

 Half-Bridge Configuration Amplifier

? Dual sided cooling compatible

 Compatible with existing surface mount technologies

 RoHS compliant containing no lead or bromide

Lead-Free (Qualified up to 260°C Reflow)

IRF6775MTR1PBF        Applications

 Class D audio amplifier applications