IRF7478PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF7478PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2.5W Ta
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
26m Ω @ 4.2A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1740pF @ 25V
Current - Continuous Drain (Id) @ 25°C
7A Ta
Gate Charge (Qg) (Max) @ Vgs
31nC @ 4.5V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.16000
$1.16
10
$1.03000
$10.3
100
$0.81370
$81.37
500
$0.63102
$315.51
IRF7478PBF Product Details
IRF7478PBF Description
IRF7478PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 60V. The operating temperature of the IRF7478PBF is -55??C~150??C TJ and its maximum power dissipation is 2.5W Ta. IRF7478PBF has 8 pins and it is available in Tube packaging way. The Drain to Source Voltage (Vdss) of IRF7478PBF is 60V.
IRF7478PBF Features
Low Gate to Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)