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IRF7478PBF

  • IRF7478PBF
  • IRF7478PBF

IRF7478PBF

IRF7478PBF

Infineon Technologies

IRF7478PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF7478PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 26m Ω @ 4.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1740pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7A Ta
Gate Charge (Qg) (Max) @ Vgs 31nC @ 4.5V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.16000 $1.16
10 $1.03000 $10.3
100 $0.81370 $81.37
500 $0.63102 $315.51
1,000 $0.49818 $0.49818
IRF7478PBF Product Details

IRF7478PBF Description


IRF7478PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 60V. The operating temperature of the IRF7478PBF is -55??C~150??C TJ and its maximum power dissipation is 2.5W Ta. IRF7478PBF has 8 pins and it is available in Tube packaging way. The Drain to Source Voltage (Vdss) of IRF7478PBF is 60V.



IRF7478PBF Features


  • Low Gate to Drain Charge to Reduce Switching Losses

  • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)

  • Fully Characterized Avalanche Voltage and Current



IRF7478PBF Applications


  • High frequency DC-DC converters

  • Lead-Free


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