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IRF6810STR1PBF

IRF6810STR1PBF

IRF6810STR1PBF

Infineon Technologies

MOSFET N CH 25V 16A S1

SOT-23

IRF6810STR1PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric S1
Supplier Device Package DIRECTFET S1
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.1W Ta 20W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.2mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2.1V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1038pF @ 13V
Current - Continuous Drain (Id) @ 25°C 16A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V

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