NVATS68301PZT4G

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NVATS68301PZT4G

Manufacturer part number:NVATS68301PZT4G

Manufacturer:ON Semiconductor

Description:NVATS68301PZT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NVATS68301PZT4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Lifecycle Status	ACTIVE (Last Updated: 14 hours ago)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101
JESD-609 Code	e6
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1
Number of Terminations	2
Terminal Finish	Tin/Bismuth (Sn/Bi)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	84W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	75m Ω @ 14A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2850pF @ 20V
Current - Continuous Drain (Id) @ 25°C	31A Ta
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	31A
Drain-source On Resistance-Max	0.075Ohm
Pulsed Drain Current-Max (IDM)	124A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	54 mJ
RoHS Status	ROHS3 Compliant