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IRF7203TR

IRF7203TR

IRF7203TR

Infineon Technologies

MOSFET P-CH 20V 4.3A 8-SOIC

SOT-23

IRF7203TR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2008
Series HEXFET®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 20V
Current - Continuous Drain (Id) @ 25°C 4.3A Ta
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drain to Source Voltage (Vdss) 20V
Drain Current-Max (Abs) (ID) 4.3A
Drain-source On Resistance-Max 0.1Ohm
DS Breakdown Voltage-Min 20V
RoHS Status Non-RoHS Compliant

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