SI5435BDC-T1-E3

new-10%

Manufacturer part number:SI5435BDC-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 30V 4.3A 1206-8

Case Package:SOT-23

Datasheet:SI5435BDC-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Supplier Device Package	1206-8 ChipFET™
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	45mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	1.3W Ta
Element Configuration	Single
Power Dissipation	1.3W
Turn On Delay Time	8 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	45mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	4.3A Ta
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	-5.9A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	45mOhm
Rds On Max	45 mΩ
Nominal Vgs	-1 V
Height	1.0922mm
Length	3.0988mm
Width	1.7018mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free