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SI4426DY-T1-GE3

SI4426DY-T1-GE3

SI4426DY-T1-GE3

Vishay Siliconix

MOSFET 20V 8.5A 2.5W 25mohm @ 4.5V

SOT-23

SI4426DY-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 40 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 25m Ω @ 8.5A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Gate Charge (Qg) (Max) @ Vgs 50nC @ 4.5V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 6.5A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage 20V
Radiation Hardening No
RoHS Status ROHS3 Compliant

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