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IRF7233PBF

IRF7233PBF

IRF7233PBF

Infineon Technologies

MOSFET P-CH 12V 9.5A 8-SOIC

SOT-23

IRF7233PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 20MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -12V
Technology MOSFET (Metal Oxide)
Current Rating -9.5A
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Power Dissipation 2.5W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 20mOhm @ 9.5A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9.5A Ta
Gate Charge (Qg) (Max) @ Vgs 74nC @ 5V
Rise Time 540ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 370 ns
Turn-Off Delay Time 77 ns
Continuous Drain Current (ID) -9.5A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -12V
Input Capacitance 6nF
Drain to Source Resistance 20mOhm
Rds On Max 20 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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