FDG6318PZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website
SOT-23
FDG6318PZ Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Weight
28mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
780MOhm
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Max Power Dissipation
300mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-500mA
[email protected] Reflow Temperature-Max (s)
30
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300mW
Turn On Delay Time
10 ns
FET Type
2 P-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
780m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
85.4pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
1.62nC @ 4.5V
Rise Time
13ns
Drain to Source Voltage (Vdss)
20V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
500mA
Gate to Source Voltage (Vgs)
12V
Drain Current-Max (Abs) (ID)
0.5A
Drain to Source Breakdown Voltage
-20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
1mm
Length
2mm
Width
1.25mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.16172
$0.48516
6,000
$0.15192
$0.91152
15,000
$0.14211
$2.13165
30,000
$0.13035
$3.9105
75,000
$0.12545
$9.40875
FDG6318PZ Product Details
FDG6318PZ Description
These dual P-channel logic level enhancement modes MOSFET are tailor-made to minimize on-resistance. The device is specially designed for bipolar digital transistors and small signal MOSFET.
FDG6318PZ Features
-0.5A, -20V
RDS(ON) = 780 mΩ @ VGS = -4.5V
RDS(ON) = 1200 mΩ @ VGS = -2.5V
Very low level gate drive requirements allowing directoperation in 3V circuits (VGS(TH) < 1.5V).
Gate-Source Zener for ESD ruggedness (>1.4kV HumanBody Model).
Compact industry standard SC-70-6 surface mountpackage.
FDG6318PZ Applications
This product is general usage and suitable for many different applications.