IRF7314TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website
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IRF7314TRPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
Series
HEXFET®
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
58mOhm
Additional Feature
AVALANCHE RATED
Voltage - Rated DC
-20V
Max Power Dissipation
2W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-5.3A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
IRF7314PBF
Number of Elements
2
Row Spacing
6.3 mm
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Turn On Delay Time
15 ns
FET Type
2 P-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
58m Ω @ 2.9A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
780pF @ 15V
Current - Continuous Drain (Id) @ 25°C
5.3A
Gate Charge (Qg) (Max) @ Vgs
29nC @ 4.5V
Rise Time
40ns
Drain to Source Voltage (Vdss)
20V
Fall Time (Typ)
49 ns
Turn-Off Delay Time
41 ns
Continuous Drain Current (ID)
-5.3A
Threshold Voltage
-700mV
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
-20V
Avalanche Energy Rating (Eas)
150 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
Recovery Time
71 ns
FET Feature
Logic Level Gate
Nominal Vgs
-700 mV
Height
1.4986mm
Length
4.9784mm
Width
3.9878mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.02000
$1.02
500
$1.0098
$504.9
1000
$0.9996
$999.6
1500
$0.9894
$1484.1
2000
$0.9792
$1958.4
2500
$0.969
$2422.5
IRF7314TRPBF Product Details
IRF7314TRPBF Description
The fifth generation HEXFET of the International Rectifier Company adopts advanced technology to achieve a very low on-resistance per silicon, this advantage. Combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, it provides designers with extremely efficient and reliable devices for use in a variety of applications.
SO-8 is improved by customizing lead frames to enhance thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of powerapplications.Withtheseimprovementsmultiple devices, which can be used to greatly reduce the packaging required by gas phase infrared or wave soldering technology in circuit board space applications.
IRF7314TRPBF Features
GenerationVTechnology
Ultra Low On-Resistance
Dual P-Channel Mosfet
Surface Mount
Available in Tape &Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
IRF7314TRPBF Applications
it provides designers with extremely efficient and reliable devices for use in a variety of applications.