Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FDPC8014S

  • FDPC8014S
  • FDPC8014S

FDPC8014S

FDPC8014S

ON Semiconductor

FDPC8014S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDPC8014S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 207.7333mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 2.3W
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 16 ns
Power - Max 2.1W 2.3W
FET Type 2 N-Channel (Dual) Asymmetrical
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2375pF @ 13V
Current - Continuous Drain (Id) @ 25°C 20A 41A
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 6ns
Drain to Source Voltage (Vdss) 25V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 41A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 110A
Pulsed Drain Current-Max (IDM) 75A
Avalanche Energy Rating (Eas) 73 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 750μm
Length 5.1mm
Width 6.1mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.738099 $0.738099
10 $0.696320 $6.9632
100 $0.656906 $65.6906
500 $0.619722 $309.861
1000 $0.584644 $584.644
FDPC8014S Product Details

FDPC8014S         Description


  The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous SyncFETTM devices (Q2) is designed to provide optimal power efficiency.

 

FDPC8014S      Features

 

Q1 N-Channel

Max. RDS(on) = 3.8 m|? at VGS = 10 V, ID = 20 A

Max. RDS(on) = 4.7 m|? at VGS = 4.5 V, ID = 18 A

Q2 N-Channel

Max. RDS(on) = 1.2 m|? at VGS = 10 V, ID = 41 A

Max. RDS(on) = 1.4 m|? at VGS = 4.5 V, ID = 37 A

Low inductance packaging shortens rise/fall times, resulting in lower switching losses

MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing

RoHS Compliant


FDPC8014S                Applications


Computing

Communications

General Purpose Point of Load

 





Related Part Number

TSM2537CQ RFG
Taiwan Semiconductor Corporation
TSM2537CQ RFG
$0 $/piece
DMC2004LPK-7
Diodes Incorporated
DMC2004LPK-7
$0 $/piece
SSM6N58NU,LF
Toshiba Semiconductor and Storage
SSM6N58NU,LF
$0 $/piece
CSD87351Q5D
Texas Instruments
CSD87351Q5D
$0 $/piece
2N7002DW-TP
Micro Commercial Co
2N7002DW-TP
$0 $/piece
FDM2509NZ
Rochester Electronics, LLC
FDM2509NZ
$0 $/piece
SQJB90EP-T1_GE3
Vishay Siliconix
SQJB90EP-T1_GE3
$0 $/piece
SIA517DJ-T1-GE3
Vishay Siliconix
SIA517DJ-T1-GE3
$0 $/piece
DMC4047LSD-13
Diodes Incorporated
DMC4047LSD-13
$0 $/piece
FDC6301N
ON Semiconductor
FDC6301N
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News