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FDS6900AS

  • FDS6900AS
  • FDS6900AS

FDS6900AS

FDS6900AS

ON Semiconductor

MOSFET Dual NCh PowerTrench

SOT-23

FDS6900AS Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 187mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series PowerTrench®, SyncFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 27MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 8.2A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Power - Max 900mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 6.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.9A 8.2A
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 4ns
Fall Time (Typ) 3 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 8.2A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.9A
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.9 V
Height 1.5mm
Length 5mm
Width 3.99mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.46046 $0.92092
5,000 $0.43744 $2.1872
12,500 $0.42099 $5.05188
FDS6900AS Product Details
The ON Semiconductor FDS6900AS is a dual N-channel PowerTrench® MOSFET array designed for high-current, low-voltage applications. This device features a low on-resistance of 0.0045 ohms and a maximum drain-source voltage of 30V. It is capable of handling up to 8A of continuous drain current and up to 16A of pulsed drain current. The FDS6900AS is ideal for use in power management, motor control, and other high-current applications. It is RoHS compliant and halogen-free, making it an environmentally friendly choice. The FDS6900AS is available in a variety of packages, including the SO-8, D2PAK, and DPAK.

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