IRF7317TRPBF    Description

The fifth generation HEXFET of the International Rectifier Company adopts advanced technology to achieve a very low switching quantity per unit area. This benefit. Combined with the fast switching speed and rugged device design of HExFET Power MOSFET, HExFET Power MOSFET provides designers with an extremely reliable device that can be used in a variety of applications.

SO-8 has been improved by customizing lead frames to enhance thermal and multi-chip capabilities, making it ideal for power applications. With these improvements, a variety of devices can be used in applications that significantly reduce circuit board space. The package is designed for vapor phase interior or wave soldering technology.

IRF7317TRPBF    Features

Generation V Technology

Ultra Low On-Resistance

Dual N and P Channel MOSFET

Surface Mount

Fully Avalanche Rated

Lead-Free

IRF7317TRPBF    Applications

HExFET Power MOSFET provides designers with an extremely reliable device that can be used in a variety of applications.