BSD223PH6327XTSA1

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BSD223PH6327XTSA1

Manufacturer part number:BSD223PH6327XTSA1

Manufacturer:Infineon Technologies

Description:BSD223PH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSD223PH6327XTSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-VSSOP, SC-88, SOT-363
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	OptiMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
HTS Code	8541.21.00.95
Voltage - Rated DC	-20V
Max Power Dissipation	250mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	-350mA
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	BSD223
Reference Standard	AEC-Q101
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	3.8 ns
FET Type	2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs	1.2 Ω @ 390mA, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 1.5μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	56pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	0.62nC @ 4.5V
Rise Time	5ns
Drain to Source Voltage (Vdss)	20V
Turn-Off Delay Time	5.1 ns
Continuous Drain Current (ID)	390mA
Gate to Source Voltage (Vgs)	12V
Max Dual Supply Voltage	-20V
Drain Current-Max (Abs) (ID)	0.39A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Feedback Cap-Max (Crss)	22 pF
Height	800μm
Length	2mm
Width	1.25mm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead