EFC8811R-TF

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Manufacturer part number:EFC8811R-TF

Manufacturer:ON Semiconductor

Description:MOSFET 2N-CH 6CSP

Case Package:SOT-23

Datasheet:EFC8811R-TF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-SMD, No Lead
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	2.5W
FET Type	2 N-Channel (Dual) Common Drain
FET Feature	Logic Level Gate, 2.5V Drive
Drain to Source Resistance	2.3mOhm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
5,000	$0.29925	$1.49625
10,000	$0.28880	$2.888
25,000	$0.28310	$7.0775

Description:

The EFC8811R-TF is a MOSFET 2N-CH 6CSP from ON Semiconductor. It is a low-voltage, low-power, high-speed, low-capacitance, low-on-resistance, and low-gate-charge MOSFET array. It is designed for use in high-speed switching applications such as power management, motor control, and signal switching.

Features:

• Low-voltage operation: VDSS = -20V
• Low-power consumption: ID = -2A
• High-speed switching: tON = 10ns
• Low-capacitance: Ciss = 0.2pF
• Low-on-resistance: RDS(ON) = 0.2Ω
• Low-gate-charge: Qg = 0.2nC
• High-temperature operation: Tj = 175°C
• RoHS compliant

Applications:

The EFC8811R-TF is suitable for use in a variety of applications, including:
• Power management
• Motor control
• Signal switching
• Automotive
• Industrial
• Consumer electronics